Dr. Öğr. Üyesi Abdullah AKKAYA
Mucur Meslek Yüksekokulu / Kimya Ve Kimyasal İşleme Teknolojileri

Yayınlar/Publications

Yayınlar

  1. Akkaya, A., Boyarbay, B., Çetin, H. et al. A Study on the Electronic Properties of SiOxNy/p-Si Interface, Silicon, (2018), 10, 2717–2725, https://doi.org/10.1007/s12633-018-9811-6
  2. Akkaya A., The Current–Voltage Characterization of the Au/Methylene Blue/GaAs Organic-Modified Schottky Diodes, Anadolu Univ. J. of Sci. and Technology A – Appl. Sci. and Eng., (2018), 202-213, DOI: 10.18038/aubtda.357685.
  3. Kahveci O., Akkaya A., Ayyıldız E., Türüt A. Comparison of the Ti/GaAs Schottky contacts parameters fabricated using DC magnetron sputtering and thermal evaporation, Surface Review and Letters, Vol. 24, No. 3 (2017) 1750047.
  4. Akkaya A., Esmer L., Karaaslan T., Çetin H., Ayyıldız E., "Electrical Characterization Of Ni/Al0.09Ga0.91N Schottky Barrier Diodes As A Function Of Temperature", Materials Science in Semiconductor Processing, (2014), 28, 127-134.
  5. Akkaya A., Esmer L., Boyarbay Kantar B., Çetin H. and Ayyıldız E., Effect of Thermal Annealing on Electrical and Structural Properties of Ni/Au/n-GaN Schottky Contacts, Microelectronic Engineering, (2014), 130, 62–68.
  6. Akkaya A., Karaaslan T., Dede M., Çetin H. and Ayyıldız E., Investigation of temperature dependent electrical properties of Ni/Al0.26Ga0.74N Schottky barrier diodes, Thin Solid Films, (2014), 564, 367–374.
  7. Çetin H., Boyarbay B., Akkaya A., Uygun A. and Ayyıldız E., t., (2011), 161, 2384-2389.
  8. Yazıcı S., Akkaya A., Ağar E., Şenel İ.and Büyükgüngör O, (2009).
  9. Akkaya A., Erşahin F., Şenel İ., Ağar E., and Büyükgüngör O., (E)-2-[(3-Bromophenylimino)methyl]-6-methylphenol. Acta Cryst., (2007), E63, o2383 – o2385.
  10. Akkaya A., Erşahin F., Ağar E., Şenel İ., and Büyükgüngör O., (E)-2-Methyl–6-[3-(trifluoromethyl)phenyliminomethyl]phenol, Acta Cryst, (2007), E63, o3555.

Proceedings ;

  1. Akkaya A. and Ayyıldız E., Effect of post annealing on electrical properties of (Ni/Au)/Al0.20Ga0.80N Schottky contacts, Materials Today: Proceedings 3 ( 2016 ), 1248–1254.
  2. Akkaya A. and Ayyıldız E., Effects of Post Annealing on I-V-T Characteristics of (Ni/Au)/Al0.09Ga0.91N Schottky Barrier Diodes, Journal of Physics: Conference Series 707 (2016) 012015

Ahi Evran Üniversitesi
Bilgisayar Bilimleri Araştırma ve Uygulama Merkezi © 2015